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| Silizium-Pin-Fotodiode mit Tageslichtsperrfilter Silicon Pin Photodiode with Daylight Filter Lead (Pb) Free Product - RoHS Compliant BP 104 FAS BP 104 FASR BP 104 FAS BP 104 FASR Wesentliche Merkmale * Speziell geeignet fur Anwendungen im Bereich von 730 nm... 1100nm * Kurze Schaltzeit (typ. 20 ns) * SMT-fahig Anwendungen * IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Lichtdimmern, Geratefernsteuerungen * Lichtschranken Typ Type BP 104 FAS BP 104 FASR Bestellnummer Ordering Code Q65110A2672 Q65110A4263 Features * Especially suitable for applications from 730 nm... 1100nm * Short switching time (typ. 20 ns) * Suitable for SMT Applications * IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment * Photointerrupters Fotostrom, Ee=1 mW/cm2, VR = 5 V, = 880 nm Photocurrent Ip (A) 34 (25) 34 (25) 2007-04-18 1 BP 104 FAS, BP 104 FASR Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Kennwerte (TA = 25 C, = 880 nm) Characteristics Bezeichnung Parameter Fotostrom Photocurrent VR = 5 V, Ee=1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Kurzschlussstrom, Ee = 0.5 mW/cm2 Short-circuit current Symbol Symbol Wert Value 34 ( 25) Einheit Unit A Symbol Symbol Wert Value - 40 ... + 100 20 150 Einheit Unit C V mW Top; Tstg VR Ptot IP S max 880 730 ... 1100 nm nm A 4.84 60 2 (30) 0.65 0.90 330 ( 250) 16 mm2 Grad deg. nA A/W Electrons Photon mV A IR S VO ISC 2007-04-18 2 BP 104 FAS, BP 104 FASR Kennwerte (TA = 25 C, = 880 nm) Characteristics (cont'd) Bezeichnung Parameter Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlassspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Symbol Symbol Wert Value 20 Einheit Unit ns tr , tf VF C0 TCV TCI NEP 1.3 48 - 2.6 0.18 3.6 x 10-14 V pF mV/K %/K W ----------Hz cm x Hz -------------------------W D* 6.1 x 1012 2007-04-18 3 BP 104 FAS, BP 104 FASR Relative Spectral Sensitivity Srel = f () 100 Srel % 80 70 60 50 40 30 20 10 0 400 OHF01430 Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee) 10 3 OHF01056 Total Power Dissipation Ptot = f (TA) 160 mW Ptot 140 120 100 OHF00958 P A 10 4 mV VO 10 3 10 2 VO 10 1 10 2 80 60 P 10 0 10 1 40 20 10 600 800 1000 nm 1200 -1 10 0 10 1 10 2 W/cm2 Ee 10 10 4 0 0 0 20 40 60 80 C 100 TA Dark Current IR = f (VR), E = 0 4000 pA OHFD1781 Capacitance C = f (VR), f = 1 MHz, E = 0 60 C pF 50 OHF01778 Dark Current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 R nA 10 2 R 3000 40 2000 30 10 1 20 1000 10 0 10 0 0 5 10 15 VR V 20 0 -2 10 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 C 100 TA Directional Characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2007-04-18 4 BP 104 FAS, BP 104 FASR Mazeichnung Package Outlines BP 104 FAS 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012) Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.6 (0.063) 0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) 0.9 (0.035) 0.7 (0.028) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012) BP 104 FASR Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.6 (0.063)0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) Mae in mm (inch) / Dimensions in mm (inch). 2007-04-18 5 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) GPLY7049 0.2 (0.008) 0.1 (0.004) 0...5 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) GEOY6861 0.2 (0.008) 0.1 (0.004) 0...5 BP 104 FAS, BP 104 FASR Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering 300 C 255 C 240 C 217 C 200 30 s max 150 120 s max 100 Ramp Up 3 K/s (max) 25 C 0 0 50 100 150 200 250 s 300 100 s max Ramp Down 6 K/s (max) 10 s min Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020C) (acc. to J-STD-020C) OHLA0687 T 250 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C 260 C +0C -5 245 C 5 C C 235 C +5C -0 50 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-18 6 |
Price & Availability of BP104FAS
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